We are exploring the revolutionary memristor paradigm that promises to redefine the architecture of computers. We study the electronic transport with explicit inclusion of underlying vacancy dynamics. We focus on the hysteretic switching phenomena.
Molecular Dynamics, Long range interactions
- 2012 Comparative study of transport models for bipolar switching in memristors EPICO-Buenos Aires
- 2011 Strongly Correlated Electron Systems Functionalized for Solar Cell and Memristor Applications SCES, Cambridge, England
- 2011 Memristors – a Revolution on the Horizon Stanford, CA
- 2013. Shin, D., O. Heinonen, and G.T. Zimanyi. Defect Model for Bipolar Resistive Switching in Metal-Insulator-Metal Heterostructures Submitted to Physical Review B.